IRF89 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
IRF8915PBF Infineon	1	Dual N-Channel MOSFET Transistor, 8.9 A, 20 V, 8-Pin SOIC Infineon IRF8915PBF	Small Outline Packages	IRF8915PBF	3D model available Symbol and footprint available 3	1 Download Model
IRF8910PBF Infineon	1	HEXFET POWER MOSFET	Small Outline Packages	IRF8910PBF	3D model available Symbol and footprint available 3	1 Download Model
IRF8915TRPBF Infineon	1	MOSFET Dual NChannel HEXFET 20V 8.9A SO8 Infineon IRF8915TRPBF Dual N-channel MOSFET Transistor, 8.9 A, 20 V, 8-Pin SOIC	Small Outline Packages	IRF8915TRPBF	3D model available Symbol and footprint available 3	1 Download Model
IRF8910TRPBF Infineon	1	MOSFET DUAL NCh 20V 10A SO-8	Small Outline Packages	IRF8910TRPBF	3D model available Symbol and footprint available 3	1 Download Model

IRF8915 Infineon Technologies AG	1	Power Field-Effect Transistor, 8.9A I(D), 20V, 0.0183ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8915	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910TRPBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8910TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910TRPBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), N-Channel, Metal-oxide Semiconductor FET		IRF8910TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8910	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910PBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRF8910PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910TRPBF-1 International Rectifier	1	Power Field-Effect Transistor		IRF8910TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8910	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910PBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8910PBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8910PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8915TRPBF International Rectifier	1	Power Field-Effect Transistor, 8.9A I(D), N-Channel, Metal-oxide Semiconductor FET		IRF8915TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910GPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8910GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

IRF8915PBF International Rectifier	1	Power Field-Effect Transistor, 8.9A I(D), 20V, 0.0183ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8915PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910PBF-1 International Rectifier	1	Power Field-Effect Transistor		IRF8910PBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910GPBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8910GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910GTRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8910GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8910TR International Rectifier	1	Power Field-Effect Transistor, 10A I(D), N-Channel, Metal-oxide Semiconductor FET		IRF8910TR	3D model not available Symbol and footprint not available 0	0 Build or Request
IRF8915 International Rectifier	1	Power Field-Effect Transistor, 8.9A I(D), 20V, 0.0183ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA		IRF8915	3D model not available Symbol and footprint not available 0	0 Build or Request

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