IRFL3 Model Download Search Results
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IRFL30N20D
International Rectifier
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1 | Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRFL30N20D |
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IRFL31N20D
International Rectifier
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1 | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRFL31N20D |
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IRFL30N20D
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRFL30N20D |
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IRFL30N20DPBF
International Rectifier
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1 | Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRFL30N20DPBF |
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IRFL30N20DPBF
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRFL30N20DPBF |
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IRFL31N20DPBF
International Rectifier
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1 | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | IRFL31N20DPBF |
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BIR-FL3E1
American Bright Optoelectronics
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1 | Infrared LED, 4.65mm, 1-Element, 940nm | BIR-FL3E1 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to262aa_3.jpg"])
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