IRFSZ Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Prices / Stock	Model	Action
IRFSZ25 Samsung Semiconductor	1	Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ25	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ20 Samsung Semiconductor	1	Power Field-Effect Transistor, 13A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ20	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ32 Samsung Semiconductor	1	Power Field-Effect Transistor, 15.6A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ32	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ34A Samsung Semiconductor	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFSZ34A	3D model not available Symbol and footprint not available 0	0 Build or Request

IRFSZ14A Samsung Semiconductor	1	Power Field-Effect Transistor, 8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFSZ14A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ24A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 14A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFSZ24A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ34A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFSZ34A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ42 Samsung Semiconductor	1	Power Field-Effect Transistor, 30A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ42	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ34 Samsung Semiconductor	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ34	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ14A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFSZ14A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ40 Samsung Semiconductor	1	Power Field-Effect Transistor, 28A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ40	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ44A Samsung Semiconductor	1	Power Field-Effect Transistor, 30A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFSZ44A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ22 Samsung Semiconductor	1	Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ22	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ24 Samsung Semiconductor	1	Power Field-Effect Transistor, 13A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ24	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ44 Samsung Semiconductor	1	Power Field-Effect Transistor, 28A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ44	3D model not available Symbol and footprint not available 0	0 Build or Request

IRFSZ30 Samsung Semiconductor	1	Power Field-Effect Transistor, 20A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ30	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ35 Samsung Semiconductor	1	Power Field-Effect Transistor, 15.6A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ35	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ24A Samsung Semiconductor	1	Power Field-Effect Transistor, 14A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFSZ24A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ45 Samsung Semiconductor	1	Power Field-Effect Transistor, 30A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFSZ45	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFSZ44A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 30A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFSZ44A	3D model not available Symbol and footprint not available 0	0 Build or Request

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