IRFW5 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
IRFW540A FAIRCHILD INDUSTRIAL	1	STOCK, SAME DAY SHIPPING. ALL PARTS ARE NEW	Transistor Outline, Vertical	IRFW540A	3D model available Symbol and footprint available 3	1 Download Model
IRFW530ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW530ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW530ATM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 14A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		IRFW530ATM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW530ATM Rochester Electronics LLC	1	14A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		IRFW530ATM	3D model not available Symbol and footprint not available 0	0 Build or Request

IRFW550A Samsung Semiconductor	1	Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFW550A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW510A Samsung Semiconductor	1	Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFW510A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW510ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW510ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW530A Samsung Semiconductor	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFW530A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW540A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW540A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW530A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW530A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW550ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW550ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW520A Samsung Semiconductor	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFW520A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW540A Samsung Semiconductor	1	Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFW540A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW510A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW510A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW540ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW540ATM	3D model not available Symbol and footprint not available 0	0 Build or Request

IRFW520A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW520A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW540ATM Rochester Electronics LLC	1	28A, 100V, 0.052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		IRFW540ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW550ATM Rochester Electronics LLC	1	40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		IRFW550ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW520ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW520ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW520ATM Rochester Electronics LLC	1	9.2A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		IRFW520ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW550A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW550A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRFW540ATM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRFW540ATM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

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