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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFW710A Samsung Semiconductor	1	Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW710A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW710S Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW710S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW740BTM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFW740BTM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW720B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFW720B	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFW710BTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFW710BTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW720A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW720A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW730BTM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFW730BTM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW730BTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFW730BTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW740B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFW740B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW740BTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFW740BTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW720ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFW720ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW720A Samsung Semiconductor	1	Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW720A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW740S Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW740S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW730BTM_NL Rochester Electronics LLC	1	5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3	IRFW730BTM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW710ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFW710ATM	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFW730S Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW730S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW710B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFW710B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW710BTM Rochester Electronics LLC	1	2A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3	IRFW710BTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW740BTM Rochester Electronics LLC	1	10A, 400V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3	IRFW740BTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW740ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFW740ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW740A Samsung Semiconductor	1	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW740A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW720BTM Rochester Electronics LLC	1	3.3A, 400V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3	IRFW720BTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW740A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW740A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW730A Samsung Semiconductor	1	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFW730A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFW730ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFW730ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
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