IRFY2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFY240EDPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EDPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240-JQR-B TT Electronics Resistors	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFY240-JQR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230R1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230R1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EBPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EBPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFY240CMSCXPBF International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240CMSCXPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EA International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EA	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240M International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240M	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240-JQR-BR1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFY240-JQR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240C International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY220-JQR-BR1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY220-JQR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY220 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY220	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY220R1 TT Electronics Resistors	1	Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY220R1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240R1 TT Electronics Resistors	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFY240R1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CM International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY240CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFY240	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFY240MEA International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEA	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MEB International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEB	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MEPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240M TT Electronics Resistors	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240M	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MEA Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MEA	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240-JQR-BR1 TT Electronics Resistors	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFY240-JQR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EB Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EB	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MED International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MED	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CSCV Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240CSCV	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EBPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EBPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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