IRH32 Model Download Search Results
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IRH3250
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRH3250 |
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IRH3250PBF
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRH3250PBF |
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IRH3250
International Rectifier
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1 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRH3250 |
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IRH3230PBF
International Rectifier
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1 | Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRH3230PBF |
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IRH3230
International Rectifier
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1 | Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRH3230 |
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IRH3230
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRH3230 |
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IRH3250PBF
International Rectifier
|
1 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRH3250PBF |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/bfm_2.jpg"])
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