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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRHM8Z60 Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8Z60	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8Z60PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8Z60PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8Z60 International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8Z60	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8Z60PBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8Z60PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHM8230 Infineon	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	IRHM8230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8360 Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 400V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	IRHM8360	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8150DPBF International Rectifier	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8150DPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8260U International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8260U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8054D International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8054D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8160D International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8160D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8260UPBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8260UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8130D Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8130D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8150U International Rectifier	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8150U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8360U Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	IRHM8360U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8130 International Rectifier	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	IRHM8130	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHM8130U International Rectifier	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM8130U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8160U Infineon Technologies AG	1	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	IRHM8160U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8450PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3	IRHM8450PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8250DPBF International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	IRHM8250DPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8450 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3	IRHM8450	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8250UPBF International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	IRHM8250UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8130PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	IRHM8130PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8160PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3	IRHM8160PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8054PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3	IRHM8054PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM8230 International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	IRHM8230	3D model not available Symbol and footprint not available 0	0 Build or Request
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