IRHN4 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Prices / Stock	Model	Action
IRHN4450 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4450	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4450 International Rectifier	1	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4450	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4230PBF International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4230PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4230 International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4230	3D model not available Symbol and footprint not available 0	0 Build or Request

IRHN450 Infineon Technologies AG	1	Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRHN450	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4250 International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4250	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4150 Infineon Technologies AG	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4150	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4054PBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4054PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4130 International Rectifier	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4130	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4054 International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4054	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4150PBF International Rectifier	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4150PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4150 International Rectifier	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4150	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4130 Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4130	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN450 International Rectifier	1	Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRHN450	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4054 Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4054	3D model not available Symbol and footprint not available 0	0 Build or Request

IRHN4130PBF International Rectifier	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4130PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4250 Infineon Technologies AG	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4250	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4230 Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4230	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4250PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4250PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
IRHN4250PBF International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRHN4250PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

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