IRHY6 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRHY63434CM Infineon Technologies AG	1	Power Field-Effect Transistor, 3.4A I(D), 550V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA		IRHY63434CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHY67434CM Infineon Technologies AG	1	Power Field-Effect Transistor, 3.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		IRHY67434CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHY63C30CM Infineon Technologies AG	1	Power Field-Effect Transistor, 3.4A I(D), 600V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA		IRHY63C30CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHY67C30C Infineon Technologies AG	1	Power Field-Effect Transistor		IRHY67C30C	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHY63C30CM International Rectifier	1	Power Field-Effect Transistor, 3.4A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA		IRHY63C30CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHY67C30CM International Rectifier	1	Power Field-Effect Transistor, 3.4A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA		IRHY67C30CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHY67C30CM Infineon Technologies AG	1	Power Field-Effect Transistor, 3.4A I(D), 600V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA		IRHY67C30CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHY63434CM International Rectifier	1	Power Field-Effect Transistor, 3.4A I(D), 550V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA		IRHY63434CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHY67C30CSCS Infineon Technologies AG	1	Power Field-Effect Transistor, 3.4A I(D), 600V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA		IRHY67C30CSCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHY67434CM International Rectifier	1	Power Field-Effect Transistor, 3.4A I(D), 550V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA		IRHY67434CM	3D model not available Symbol and footprint not available 0	0 Build or Request

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