IRHY7 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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IRHY7130CM International Rectifier
1 Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7130CM 0 Build or Request
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IRHY7G30CMSE International Rectifier
1 Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7G30CMSE 0 Build or Request
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IRHY7G30CMSEPBF International Rectifier
1 Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7G30CMSEPBF 0 Build or Request
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IRHY7130CM Infineon Technologies AG
1 Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7130CM 0 Build or Request
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IRHY7G30CMSEPBF Infineon Technologies AG
1 Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7G30CMSEPBF 0 Build or Request
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IRHY7230CM Infineon Technologies AG
1 Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7230CM 0 Build or Request
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IRHY7130CMPBF Infineon Technologies AG
1 Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7130CMPBF 0 Build or Request
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IRHY7130CMPBF International Rectifier
1 Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7130CMPBF 0 Build or Request
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IRHY7230CM International Rectifier
1 Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7230CM 0 Build or Request
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IRHY7230CMPBF Infineon Technologies AG
1 Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7230CMPBF 0 Build or Request
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IRHY7230CMPBF International Rectifier
1 Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7230CMPBF 0 Build or Request
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IRHY7G30CMSESCVPBF International Rectifier
1 Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7G30CMSESCVPBF 0 Build or Request
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IRHY7G30CMSESCV International Rectifier
1 Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7G30CMSESCV 0 Build or Request
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IRHY7G30CMSE Infineon Technologies AG
1 Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA IRHY7G30CMSE 0 Build or Request
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