IRHY8 Model Download Search Results
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IRHY8130CM
International Rectifier
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1 | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRHY8130CM |
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IRHY8130CMPBF
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRHY8130CMPBF |
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IRHY8130CMPBF
International Rectifier
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1 | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRHY8130CMPBF |
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IRHY8130CM
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRHY8130CM |
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IRHY8230CM
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRHY8230CM |
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IRHY8230CM
International Rectifier
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1 | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRHY8230CM |
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IRHY8230CMPBF
International Rectifier
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1 | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRHY8230CMPBF |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRHY8230CMPBF
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | IRHY8230CMPBF |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to257_3.jpg"])
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