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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRHYB68230CM Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRHYB68230CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB9A7130CM Infineon Technologies AG	1	Power Field-Effect Transistor, 30A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB9A7130CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB9A3234CM Infineon Technologies AG	1	Power Field-Effect Transistor, 17A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB9A3234CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67134CM Infineon Technologies AG	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67134CM	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHYB63230CM International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63230CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB597Z30CMPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB597Z30CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63134CM International Rectifier	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63134CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB597034CM Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB597034CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67134CMPBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67134CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67134CMPBF International Rectifier	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67134CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63134CMSCS Infineon Technologies AG	1	Power Field-Effect Transistor	IRHYB63134CMSCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB597034CMPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB597034CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB64130CM International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRHYB64130CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB597034CMPBF International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB597034CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63134CM Infineon Technologies AG	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63134CM	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHYB67134CM Vishay Intertechnologies	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67134CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB9A93130CM Infineon Technologies AG	1	Power Field-Effect Transistor, 23A I(D), 100V, 0.076ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB9A93130CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63130CMPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63130CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB593034CMPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB593034CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63230CMPBF International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63230CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB64230CM Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRHYB64230CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB593034CMPBF International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB593034CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB9A7034CM Infineon Technologies AG	1	Power Field-Effect Transistor, 30A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB9A7034CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB593Z30CMPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB593Z30CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63134CMPBF International Rectifier	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63134CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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