IRL25 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRL2505PBF Infineon	1	MOSFET N-Ch 55V 104A LogicFET TO220AB International Rectifier IRL2505PBF N-channel MOSFET Transistor, 104 A, 55 V, 3-Pin TO-220AB	Transistor Outline, Vertical	IRL2505PBF	3D model available Symbol and footprint available 3	1 Download Model
	IRL2505SPBF Infineon	1	Infineon IRL2505SPBF N-channel MOSFET, 104 A, 55 V HEXFET, 3-Pin D2PAK	Other	IRL2505SPBF	3D model not available Symbol and footprint available 2	1 Download Model
	IRL2505-013PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-005 International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-005	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRL2505-017 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-017	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-006 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-006	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-024 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-024	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-010 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-029PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-029PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-015PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-015PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-031 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-031	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505STRRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRL2505STRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505STRR International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRL2505STRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-018 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-018	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505LPBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		IRL2505LPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRL2505-024PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-024PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505STRLPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRL2505STRLPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-005 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-005	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-005PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-005PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-015 Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-015	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-010PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-010PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-024PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-024PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-019PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-019PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-009PBF International Rectifier	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL2505-009PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL2505-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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