IRL61 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRL610 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL610	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL610AJ69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRL610AJ69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL610J69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRL610J69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL611 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL611	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRL610SU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRL610SU	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL610A Rochester Electronics LLC	1	3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN		IRL610A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL610A Samsung Semiconductor	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL610A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL610 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL610	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL610S Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRL610S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL610SR Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRL610SR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL610A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL610A	3D model not available Symbol and footprint not available 0	0 Build or Request

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