IRL640A Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRL640A onsemi	1	Logic-Level Gate Drive; 18 A, 200 V rDS(ON) = 180 mΩ @ VGS = 5 V; Low Gate Charge (Typ. 40 nC); Low Crss (Typ. 95 pF); Fast Switching Speed; 100% Avalanche Tested; Improved dv/dt Capability	Transistor Outline, Vertical	IRL640A	3D model available Symbol and footprint available 3	1 Download Model
	IRL640A Samsung Semiconductor	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL640A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL640A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRL640A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRL640APWD Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor		IRL640APWD	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRL640AJ69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRL640AJ69Z	3D model not available Symbol and footprint not available 0	0 Build or Request

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