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IRL640A - onsemi

Description: Logic-Level Gate Drive; 18 A, 200 V rDS(ON) = 180 mΩ @ VGS = 5 V; Low Gate Charge (Typ. 40 nC); Low Crss (Typ. 95 pF); Fast Switching Speed; 100% Avalanche Tested; Improved dv/dt Capability

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PCB Footprints
IRL640A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220, Molded, 3-Lead, Jedec Variation AB_2020
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3D Models
IRL640A - onsemi  - 3D model - Transistor Outline, Vertical - TO220, Molded, 3-Lead, Jedec Variation AB_2020
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IRL640A Details

  • Manufacturer Part Number:

    IRL640A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    64 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    63 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL640A Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRL640A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the IRL640A is properly biased, make sure to provide a stable gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) within the recommended operating range. Additionally, ensure the device is operated within its recommended temperature range and provide adequate heat sinking to prevent thermal runaway.
  • For optimal performance and reliability, it is recommended to follow good PCB design practices, such as minimizing trace inductance, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, ensure the device is mounted on a heat sink with a thermal interface material to improve heat dissipation.
  • To protect the IRL640A from electrostatic discharge (ESD), handle the device with anti-static wrist straps, mats, or other ESD protection devices. Ensure the PCB is designed with ESD protection in mind, and consider adding ESD protection diodes or resistors to the circuit.
  • The IRL640A is a reliable device with a typical lifespan of 10-15 years or more, depending on operating conditions and environmental factors. However, the device's reliability can be affected by factors such as temperature, humidity, and power cycling. Follow recommended operating conditions and design guidelines to ensure optimal reliability and lifespan.

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IRL640A Overview

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Part Image IRL640A Fairchild Semiconductor Corporation

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Part Image IRL640A Samsung Semiconductor

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB