IRLR3410TRPBF Model Download Search Results
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IRLR3410TRPBF
VBsemi Electronics Co Ltd
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1 | N-Channel 100 V MOSFET with 175 °C junction temperature, 3 A continuous drain current at 125 °C, 0.140 ohm RDS(on) at VGS = 10 V, and TO-252 package. | IRLR3410TRPBF |
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IRLR3410TRPBF
Infineon
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1 | HEXFET N-Ch MOSFET 17A 100V DPAK International Rectifier IRLR3410TRPBF N-channel MOSFET Transistor, 17 A, 100 V, 3-Pin DPAK | Other | IRLR3410TRPBF |
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IRLR3410TRPBF
International Rectifier
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1 | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | IRLR3410TRPBF |
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![Part Image](["https://componentsearchengine.com/Images/9/IRLR3410TRPBF.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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