IRLS6 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Prices / Stock	Model	Action
IRLS641 Samsung Semiconductor	1	Power Field-Effect Transistor, 9A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS641	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS620A Samsung Semiconductor	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS620A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS620A Rochester Electronics LLC	1	4.1A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN	IRLS620A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS640A onsemi	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS640A	3D model not available Symbol and footprint not available 0	0 Build or Request

IRLS620A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS620A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS610A Samsung Semiconductor	1	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS610A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS624 Samsung Semiconductor	1	Power Field-Effect Transistor, 3.2A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS624	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS631 Samsung Semiconductor	1	Power Field-Effect Transistor, 5.1A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS631	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS630A Samsung Semiconductor	1	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS630A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS630A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS630A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS610A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS610A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS610 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS610	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS640 Samsung Semiconductor	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS640	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS640A Samsung Semiconductor	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS640A	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS640A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLS640A	3D model not available Symbol and footprint not available 0	0 Build or Request

IRLS611 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.1A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS611	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS630 Samsung Semiconductor	1	Power Field-Effect Transistor, 5.1A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS630	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS620 Samsung Semiconductor	1	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS620	3D model not available Symbol and footprint not available 0	0 Build or Request
IRLS621 Samsung Semiconductor	1	Power Field-Effect Transistor, 3.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLS621	3D model not available Symbol and footprint not available 0	0 Build or Request

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