IRLU2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRLU2908 Infineon	1	Automotive HEXFET MOSFET	Transistor Outline, Vertical	IRLU2908	3D model available Symbol and footprint available 3	1 Download Model
	AUIRLU2905 Infineon	1	MOSFET N-Ch 55V 42A Logic HEXFET IPAK International Rectifier AUIRLU2905 N-channel MOSFET Transistor, 42 A, 55 V, 3-Pin TO-252	Transistor Outline, Vertical	AUIRLU2905	3D model available Symbol and footprint available 3	1 Download Model
	IRLU220A Samsung Semiconductor	1	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRLU220A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2905PBF International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2905PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLU230A Samsung Semiconductor	1	Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRLU230A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU221 Samsung Semiconductor	1	Power Field-Effect Transistor, 4A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRLU221	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2703 International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2703	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2905ZPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2905ZPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2905ZPBF International Rectifier	1	Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2905ZPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU210A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IRLU210A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU211 Samsung Semiconductor	1	Power Field-Effect Transistor, 2A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRLU211	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU220 Samsung Semiconductor	1	Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRLU220	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2905 Infineon Technologies AG	1	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2905	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2705PBF International Rectifier	1	Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2705PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU220A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IRLU220A	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLU2703PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2703PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU210A Samsung Semiconductor	1	Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRLU210A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2905 International Rectifier	1	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2905	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU230A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IRLU230A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2905PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2905PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2703PBF International Rectifier	1	Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2703PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU210 Samsung Semiconductor	1	Power Field-Effect Transistor, 2A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRLU210	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU210ATU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		IRLU210ATU	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU224 Samsung Semiconductor	1	Power Field-Effect Transistor, 3.3A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRLU224	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLU2905Z International Rectifier	1	Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		IRLU2905Z	3D model not available Symbol and footprint not available 0	0 Build or Request
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