IRLZ1 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRLZ14PBF Vishay	1	N-channel logicFET,IRLZ14 10A 60V	Transistor Outline, Vertical	IRLZ14PBF	3D model available Symbol and footprint available 3	1 Download Model
	IRLZ14SPBF Vishay	1	Power MOSFET N-Channel 60 V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)	Other	IRLZ14SPBF	3D model not available Symbol and footprint available 2	1 Download Model
	IRLZ14-002PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-002PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-018PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLZ14-031 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-031	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-031 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-031	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14L International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA		IRLZ14L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-018 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-018	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14STRL International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRLZ14STRL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14 Vishay Intertechnologies	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-009PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14STRR International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRLZ14STRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14STRRPBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		IRLZ14STRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-018PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-018PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLZ14-007PBF International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-007PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-030 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-030	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-030PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-030PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-013 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-012PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-005 International Rectifier	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-005	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14 National Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-006 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-006	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-010 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLZ14-017 Infineon Technologies AG	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRLZ14-017	3D model not available Symbol and footprint not available 0	0 Build or Request
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