IS2-1 Model Download Search Results
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IS2-1009EH-Q
Renesas Electronics
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1 | The Star*Power™ Radiation Hardened IS-1009RH, IS-1009EH are a 2. 5V shunt regulator diode is designed to provide a stable 2. 5V reference over a wide current range. These devices are designed to maintain stability over the full military temperature range and over time. The 0. 2% reference tolerance is achieved by on-chip trimming. An adjustment terminal is provided to allow for the calibration of system errors. The use of this terminal to adjust the reference voltage does not effect the temperature coeffici | Other | IS2-1009EH-Q |
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IS2-1009EH/PROTO
Renesas Electronics
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1 | The Star*Power™ Radiation Hardened IS-1009RH, IS-1009EH are a 2. 5V shunt regulator diode is designed to provide a stable 2. 5V reference over a wide current range. These devices are designed to maintain stability over the full military temperature range and over time. The 0. 2% reference tolerance is achieved by on-chip trimming. An adjustment terminal is provided to allow for the calibration of system errors. The use of this terminal to adjust the reference voltage does not effect the temperature coeffici | Other | IS2-1009EH/PROTO |
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BMIS-210-F
Laird Technologies
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1 | EMI Gaskets, Sheets, Absorbers & Shielding BMIS-210 Frame 1.732" x 1.201" | Other | BMIS-210-F |
3
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AIS2120SXTR
STMicroelectronics
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1 | Hi-g (+-120g) acelrometer/vibration sensor 2-axis | Small Outline Packages | AIS2120SXTR |
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IS21ES04G-JQLI
Integrated Silicon Solution Inc.
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1 | eMMC 4GB, 100 Ball FBGA, 3.3V, RoHS | BGA | IS21ES04G-JQLI |
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SIT2001BI-S2-18S-24.000000
SiTime
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1 | Single-Chip, SOT23 Oscillator | Other | SIT2001BI-S2-18S-24.000000 |
3
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SIT2024BI-S2-18E-26.000000
SiTime
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1 | Automotive AEC-Q100 SOT23 Oscillator | Other | SIT2024BI-S2-18E-26.000000 |
3
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SIT2001BI-S2-18E-19.200000
SiTime
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1 | Single-Chip, SOT23 Oscillator | Other | SIT2001BI-S2-18E-19.200000 |
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IS21ES08G-JCLI-TR
Integrated Silicon Solution Inc.
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1 | Managed NAND Flash Serial e-MMC 3.3V 64G-bit 64G/16G/8G x 1/4-bit/8-bit 153-Pin VFBGA T/R | BGA | IS21ES08G-JCLI-TR |
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IS21ES08G-JQLI
Integrated Silicon Solution Inc.
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1 | eMMC 8GB 3.3V 200Mhz eMMC 5.0 NAND Flash | BGA | IS21ES08G-JQLI |
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IS21ES16G-JQLI
Integrated Silicon Solution Inc.
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1 | eMMC 16 GB, 100 Ball FBGA, 3.3V, RoHS | BGA | IS21ES16G-JQLI |
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SIT2001BI-S2-18N-48.000000
SiTime
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1 | Single-Chip, SOT23 Oscillator | Other | SIT2001BI-S2-18N-48.000000 |
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SIS212-24VDC
ELESTA
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1 | Power Switching Relay DPST-NO|SPST-NC | Other | SIS212-24VDC |
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BMI-S-210-C
Laird Performance Materials
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1 | EMI Gaskets, Sheets, Absorbers & Shielding BLS,2PSH,CV,SnSat,LP .095x1.224x1.756in | Other | BMI-S-210-C |
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IS21ES64G-JQLI
Integrated Silicon Solution Inc.
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1 | eMMC | BGA | IS21ES64G-JQLI |
3
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IS21TF08G-JQLI
Integrated Silicon Solution Inc.
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1 | eMMC 8GB, 100 Ball FBGA, 3.3V, RoHS | BGA | IS21TF08G-JQLI |
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IS21ES08GA-JQLI
Integrated Silicon Solution Inc.
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1 | FLASH - NAND (MLC) Memory IC 64Gbit eMMC 100-LFBGA (14x18) | BGA | IS21ES08GA-JQLI |
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IS21TF32G-JCLI
Integrated Silicon Solution Inc.
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1 | FLASH - NAND (TLC) Memory IC 256Gbit MMC 200 MHz 153-VFBGA (11.5x13) | BGA | IS21TF32G-JCLI |
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IS21ES32G-JCLI
Integrated Silicon Solution Inc.
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1 | eMMC 32 GB, 153 Ball FBGA, 3.3V, RoHS | BGA | IS21ES32G-JCLI |
3
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IS21EF04GP-BCLI
Integrated Silicon Solution Inc.
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1 | eMMC 4GB, 153 Ball FBGA, 3.3V, Boot Partition size, RoHS, Programmed | BGA | IS21EF04GP-BCLI |
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IS21TF128G-JCLI
Integrated Silicon Solution Inc.
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1 | eMMC 128GB, 153 Ball FBGA, 3.3V, RoHS | BGA | IS21TF128G-JCLI |
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IS21EF08G-JQLI
Integrated Silicon Solution Inc.
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1 | eMMC 8GB, 100 Ball FBGA, 33V, RoHS | BGA | IS21EF08G-JQLI |
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CIS21J121NE
SAMSUNG
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1 | Ferrite Beads Multi-Layer High Current 120Ohm 25% 100MHz 5A 20mOhm DCR 0805 T/R | Ferrite Bead Chip | CIS21J121NE |
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SIT2001BI-S2-18E-100.000000
SiTime
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1 | Single-Chip, SOT23 Oscillator | Other | SIT2001BI-S2-18E-100.000000 |
3
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SIT2001BI-S2-18E-27.000000
SiTime
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1 | Single-Chip, SOT23 Oscillator | Other | SIT2001BI-S2-18E-27.000000 |
3
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![Part Image](["https://componentsearchengine.com/Images/1/BMIS-210-F.jpg",null,null])
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