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K40T1202
Infineon
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1 | IGBT in 2 nd generation TRENCHSTOP™ with soft, fast recovery anti-parallel Emitter Controlled Diode | Transistor Outline, Vertical | K40T1202 |
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APTM100SK40T1G
Microsemi Corporation (now Microchip)
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1 | Power Field-Effect Transistor, 20A I(D), 1000V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APTM100SK40T1G |
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AK40T11A
AK Semiconductor
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1 | N-Channel Super Trench Power MOSFET AKP40T11A with 40V drain-source voltage, 110A continuous drain current, 2.5mΩ typical RDS(on) at VGS=10V, 30.4nC total gate charge, suitable for high-frequency switching and synchronous rectification. | AK40T11A |
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