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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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QMB-09B-03
Jiangsu Huaneng Elec
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1 | Magnetic NO 2700Hz 3V 2 ~ 5V Φ9mm 9*5.5mm Buzzers | Other | QMB-09B-03 |
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W631GU8MB09K
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GU8MB09K |
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W632GU8MB09W
Winbond
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1 | BGA78 | BGA | W632GU8MB09W |
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W632GG8MB09S
Winbond
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1 | SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W632GG8MB09S |
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W631GU6MB09W
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d | BGA | W631GU6MB09W |
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W632GG8MB09A
Winbond
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1 | SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W632GG8MB09A |
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W632GG6MB09W
Winbond
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1 | Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR) Precharged Power Down and Active Power Down Data masks (DM) for write data Programmable CAS Write Latency (CWL) per operating frequency Write Latency WL = AL + CWL Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence System level timing calibration support via write leveling and MPR read pattern ZQ Calibration for output driver and ODT using external reference r | BGA | W632GG6MB09W |
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W631GU6MB09S
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d | BGA | W631GU6MB09S |
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W631GG8MB09A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09A |
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W631GG6MB09W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB09W |
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W632GG6MB09K
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GG6MB09K |
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W632GG8MB09W
Winbond
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1 | SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W632GG8MB09W |
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W632GU8MB09K
Winbond
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1 | VFBGA - 78 | BGA | W632GU8MB09K |
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W631GG8MB09S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09S |
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W631GU8MB09A
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d | BGA | W631GU8MB09A |
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W631GG8MB09W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09W |
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W631GG6MB09S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB09S |
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W631GU6MB09A
Winbond
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1 | Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d | BGA | W631GU6MB09A |
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W631GU8MB09W
Winbond
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1 | SDRAM - DDR3L Memory IC 1Gbit Parallel 800 MHz 20 ns 78-VFBGA (10.5x8) | BGA | W631GU8MB09W |
3
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W632GG6MB09A
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GG6MB09A |
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W632GU6MB09K
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GU6MB09K |
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W631GG8MB09K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG8MB09K |
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W632GU6MB09S
Winbond
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1 | 2Gb DDR3 SDRAM 2133MHz VFBGA96 | BGA | W632GU6MB09S |
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W632GU8MB09S
Winbond
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1 | VFBGA - 78 | BGA | W632GU8MB09S |
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W632GU8MB09A
Winbond
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1 | BGA78 | BGA | W632GU8MB09A |
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