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MBR10100G
onsemi
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1 | Low Forward Voltage; Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds; Low Power Loss/High Efficiency; Epoxy Meets UL94, VO at 1/8; 150 °C Operating Junction Temperature; Case: Epoxy, Molded; Low Stored Charge Majority Carrier Conduction Mechanical Characteristics:; Weight: 1.9 grams (approximately); High Surge Capacity; Guard-Ring for Stress Protection; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; AEC-Q101 Qualified and PPAP Capable; NRVB P | Transistor Outline, Vertical | MBR10100G |
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MBR10100G
Rochester Electronics LLC
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1 | 10A, 100V, SILICON, RECTIFIER DIODE, TO-220AC, LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN | MBR10100G |
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MBR10100G
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, | MBR10100G |
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MBR10100G-SMC-R
Unisonic Technologies Co Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, DO-214AB | MBR10100G-SMC-R |
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MBR10100G-TF1-T
Unisonic Technologies Co Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB | MBR10100G-TF1-T |
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MBR10100G-T27-T
Unisonic Technologies Co Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-277 | MBR10100G-T27-T |
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MBR10100G-T27-R
Unisonic Technologies Co Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-277 | MBR10100G-T27-R |
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MBR10100-G
Sensitron Semiconductors
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2 | MBR10100-G |
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MBR10100-G
Sangdest Microelectronics (Nanjing) Co Ltd
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2 | MBR10100-G |
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