MBRF20H150CTG Model Download Search Results
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MBRF20H150CTG
onsemi
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1 | Low Forward Voltage; Low Power Loss/High Efficiency; High Surge Capability; 20 A Total (10 A Per Diode Leg); Guard-Ring for Stress Protection; These are Pb-Free Devices Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94 V-0 @ 0.125 in; Weight (Approximately): 1.9 Grams (TO-220 & TO-220FP); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds | Transistor Outline, Vertical | MBRF20H150CTG |
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MBRF20H150CTG
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-220AB | MBRF20H150CTG |
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![Part Image](["https://www.onsemi.com/PowerSolutions/product.do?id=MBRF20H150CTG","https://www.onsemi.com/PowerSolutions/product.do?id=MBRF20H150CTG","//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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