MBT3906DW1T1G Model Download Search Results
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MBT3906DW1T1G
onsemi
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1 | hFE, 100-300; Low VCE(sat), ≤ 400 mV; Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; Available in 8 mm, 7-inch/3,000 Unit Tape and Reel; Device Marking: MBT3906DW1T1 = A2; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | MBT3906DW1T1G |
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SMBT3906DW1T1G
onsemi
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1 | hFE, 100-300; Low VCE(sat), ≤ 400 mV; Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; Available in 8 mm, 7-inch/3,000 Unit Tape and Reel; Device Marking: MBT3906DW1T1 = A2; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (6-Pin) | SMBT3906DW1T1G |
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S-LMBT3906DW1T1G
LRC Leshan Radio Co Ltd
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1 | Small Signal Bipolar Transistor | S-LMBT3906DW1T1G |
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LMBT3906DW1T1G
LRC Leshan Radio Co Ltd
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1 | Small Signal Bipolar Transistor, 0.2A I(C), PNP | LMBT3906DW1T1G |
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![Part Image](["https://componentsearchengine.com/graphics/no-image.png",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sc88_6.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/SMBT3906DW1T1G.jpg",null,null])
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