MJD253T4G Model Download Search Results
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MJD253T4G
onsemi
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1 | High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); High DC Current Gain hFE = 40 (Min) @ IC= 200 mA | Other | MJD253T4G |
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NJVMJD253T4G
onsemi
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1 | Bipolar Transistors - BJT BIP DPAK PNP 4A 100V TR , 600mV , 12.5W , 40MHz , -65C ~ +150C | Other | NJVMJD253T4G |
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NJVMJD253T4G-VF01
onsemi
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1 | Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | NJVMJD253T4G-VF01 |
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![Part Image](["https://www.mouser.com/images/onsemiconductor/images/DPAK3-369AS_SPL.JPG",null,null])
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