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Image Part Number D.S Description Package Category Prices / Stock Model Action
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MJE243G onsemi
1 High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc; High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 - MJE243, MJE253; Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB; High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) MJE243, MJE253; Pb-Free Packages are Available Transistor Outline, Vertical MJE243G 1 Download Model
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MJE243G Rochester Electronics LLC
1 4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, ROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN MJE243G 0 Build or Request
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