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MJL4302AG
onsemi
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1 | High Safe Operating Area - 1.0 A / 100 V at 1 Second; High ft; - 350V Collector-Emitter Sustaining Voltage; Gain Complementary:; Gain Linearity from 100 mA to 5 A; High Gain - 80 to 250; hfe = 50 (min) at Ic = 8A; Low Harmonic Distortion | Transistor Outline, Vertical | MJL4302AG |
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MJL4302A
onsemi
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1 | Power Bipolar Transistor, 15A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin | MJL4302A |
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