MTLB3 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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MTLB3135-Y Marktech Optoelectronics
1 Optoelectronic Device MTLB3135-Y 0 Build or Request
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MTLB3175-Y Marktech Optoelectronics
1 Optoelectronic Device MTLB3175-Y 0 Build or Request
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MTLB3150-Y-A Marktech Optoelectronics
1 LIGHT BAR, Yellow, Water Clear, 12.7mm MTLB3150-Y-A 0 Build or Request
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MTLB3160-Y Marktech Optoelectronics
1 Optoelectronic Device MTLB3160-Y 0 Build or Request
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MTLB3150-Y Marktech Optoelectronics
1 Dual Color LED Array MTLB3150-Y 0 Build or Request
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K4H1G0438M-TLB3 Samsung Semiconductor
1 DDR1 DRAM, 256MX4, 0.7ns, CMOS, PDSO66 K4H1G0438M-TLB3 0 Build or Request
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K4H1G1638M-TLB3 Samsung Semiconductor
1 DDR1 DRAM, 64MX16, 0.7ns, CMOS, PDSO66 K4H1G1638M-TLB3 0 Build or Request
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K4H1G0838M-TLB3T Samsung Semiconductor
1 DDR1 DRAM, 128MX8, 0.7ns, CMOS, PDSO66 K4H1G0838M-TLB3T 0 Build or Request
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JMTLB3134K Jiangsu JieJie Microelectronics Co Ltd
1 20V, 0.9A N-channel enhancement mode power MOSFET in SOT-363-6L package with RDS(on) less than 175mΩ at VGS=4.5V and low gate charge, suitable for load switch, PWM, and power management applications. JMTLB3134K 0 Build or Request
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K4H1G0438M-TLB30 Samsung Semiconductor
1 DDR1 DRAM, 256MX4, 0.7ns, CMOS, PDSO66 K4H1G0438M-TLB30 0 Build or Request
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K4H1G0838M-TLB30 Samsung Semiconductor
1 DDR1 DRAM, 128MX8, 0.7ns, CMOS, PDSO66 K4H1G0838M-TLB30 0 Build or Request
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K4H1G0438M-TLB3T Samsung Semiconductor
1 DDR1 DRAM, 256MX4, 0.7ns, CMOS, PDSO66 K4H1G0438M-TLB3T 0 Build or Request
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K4H1G0838M-TLB3 Samsung Semiconductor
1 DDR1 DRAM, 128MX8, 0.7ns, CMOS, PDSO66 K4H1G0838M-TLB3 0 Build or Request
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K4H1G1638M-TLB30 Samsung Semiconductor
1 DDR1 DRAM, 64MX16, 0.7ns, CMOS, PDSO66 K4H1G1638M-TLB30 0 Build or Request
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