MUR1100EG Model Download Search Results
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MUR1100EG
onsemi
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1 | 10 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature | Diodes, Axial Diameter Horizontal Mounting | MUR1100EG |
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MUR1100EG
New Jersey Semiconductor Products Inc
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1 | Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon | MUR1100EG |
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