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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NCE01P18K NCEPower	1	1-NCE P-Channel Enhancement Mode Power MOSFET	Other	NCE01P18K	3D model not available Symbol and footprint available 2	1 Download Model
	NCE01H10 NCEPOWER	1	NCE01H10 is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and ultralow RDS(ON) of 9.9mΩ typical at VGS=10V, designed for high-efficiency power switching applications.		NCE01H10	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0160AG NCEPOWER	1	NCE0160AG is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 60A continuous drain current, and low on-resistance of 13.5mΩ typical at 10V gate-source voltage, utilizing advanced trench technology for high efficiency and thermal performance.		NCE0160AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0117AK NCEPOWER	1	NCE0117AK is a channel enhancement mode power MOSFET with 100V drain-source voltage, 17A continuous drain current, and low on-resistance of 42mΩ typical at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications.		NCE0117AK	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE0125AK NCEPOWER	1	NCE0125AK is a Channel Enhancement Mode Power MOSFET with 100V VDS, 25A ID, and low RDS(ON) of 28mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance in switching applications.		NCE0125AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0115AK NCEPOWER	1	NCE0115AK N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 15A continuous drain current, RDS(ON) less than 90mΩ at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications.		NCE0115AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0140I2 NCEPOWER	1	NCE0140I2 is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, and low on-resistance of 13mΩ typical at VGS=10V, using advanced trench technology for high efficiency and thermal performance.		NCE0140I2	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0157A2D NCEPOWER	1	NCE0157A2D is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and ultralow RDS(ON) of 12.5mΩ typical at VGS=10V, designed for high-frequency switching and power applications.		NCE0157A2D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0103 NCEPOWER	1	NCE0103 N-Channel Enhancement Mode MOSFET with 100V drain-source voltage, 3A continuous drain current, 136mΩ typical RDS(ON) at VGS=10V, and 1.5W power dissipation in SOT-23 package.		NCE0103	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0117I NCEPOWER	1	NCE0117I N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 17A continuous drain current, and low on-resistance of 56mΩ typical at 10V gate-source voltage, designed for high-frequency switching applications.		NCE0117I	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0102Z NCEPOWER	1	NCE0102Z N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 2A continuous drain current, RDS(ON) less than 240mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications.		NCE0102Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0130A NCEPOWER	1	NCE0130A N-Channel Enhancement Mode Power MOSFET with 100V VDS, 30A ID, and RDS(ON) less than 32mΩ at VGS=10V, featuring low gate charge, high ESD capability, and suitability for power switching and high-frequency applications.		NCE0130A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0110AK NCEPOWER	1	NCE0110AK is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 10A continuous drain current, RDS(ON) less than 110mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications.		NCE0110AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0157A2 NCEPOWER	1	NCE0157A2 is a Channel Enhancement Mode Power MOSFET with 100V VDS, 57A ID, and RDS(ON) less than 14.5mΩ at VGS=10V, using advanced trench technology for low gate charge and high efficiency in power switching applications.		NCE0157A2	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0157A NCEPOWER	1	NCE0157A2 is a channel enhancement mode power MOSFET with 100V drain-source voltage, 57A continuous drain current, and low on-resistance of 12.5mΩ at VGS=10V, suitable for high-frequency switching applications.		NCE0157A	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE0160G NCEPOWER	1	NCE0160G N-channel enhancement mode power MOSFET with 100V drain-source voltage, 60A continuous drain current, and 16mΩ typical RDS(ON) at 12.6V gate-source voltage, suitable for high-frequency switching applications.		NCE0160G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE01H11 NCEPOWER	1	NCE01H11 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 110A continuous drain current, 6.8mΩ typical RDS(ON) at VGS=10V, and advanced trench technology for low gate charge and high efficiency in power switching applications.		NCE01H11	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0125AI NCEPOWER	1	NCE0125AI is a channel enhancement mode power MOSFET with 100V drain-source voltage, 25A continuous drain current, and low on-resistance of 31mΩ typical at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications.		NCE0125AI	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE01H13D NCEPOWER	1	NCE01H13D is an N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.		NCE01H13D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0140IA NCEPOWER	1	NCE0140IA N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, RDS(ON) less than 17mΩ at VGS=10V, and low gate charge for high-efficiency power switching applications.		NCE0140IA	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0104S NCEPOWER	1	NCE0104S is a channel enhancement mode power MOSFET with 100V drain-source voltage, 4A continuous drain current, and low on-resistance of 144mΩ typical at 10V gate-source voltage, suitable for switching applications.		NCE0104S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0130GA NCEPOWER	1	NCE0130GA is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 25mΩ typical at 10V gate-source voltage, fabricated using advanced trench technology for high efficiency and thermal performance.		NCE0130GA	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0106AR NCEPOWER	1	NCE0106AR N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 6A continuous drain current, RDS(ON) less than 130mΩ at VGS=10V, and low gate charge for high-frequency switching applications.		NCE0106AR	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0157D NCEPOWER	1	NCE0157D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications.		NCE0157D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0159 NCEPOWER	1	NCE0159 N-channel enhancement mode power MOSFET with 100V drain-source voltage, 59A continuous drain current, and 15mΩ typical RDS(ON) at 10V VGS, featuring low gate charge and high ESD capability.		NCE0159	3D model not available Symbol and footprint not available 0	0 Build or Request
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