NCE30 Footprint, Symbol and 3D Model search results

Showing 25 of 99 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NCE3018AS NCEPower	1	Power mosfet	Small Outline Packages	NCE3018AS	3D model available Symbol and footprint available 3	1 Download Model
	NCE30P30K NCEPower	1	P-Channel Enhancement Mode Power MOSFET	Other	NCE30P30K	3D model not available Symbol and footprint available 2	1 Download Model
	NCE30NP1812K NCEPOWER	1	NCE30NP1812K is a complementary N and P-channel enhancement mode power MOSFET in a surface mount TO-252-4L package, featuring low RDS(ON) and gate charge, with 30V rating, 18A continuous drain current for N-channel, and -12A for P-channel.		NCE30NP1812K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H15B NCEPOWER	1	NCE30H15B is a 30V N-channel enhancement mode power MOSFET with advanced trench technology, offering RDS(ON) less than 2.2mΩ at VGS=10V and 3.5mΩ at VGS=4.5V, continuous drain current up to 150A, and low gate charge for high-frequency switching applications.		NCE30H15B	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE30H14K NCEPOWER	1	30V, 140A NCE30H14K trench MOSFET with RDS(ON) less than 3.0mOhm at VGS=10V, designed for high-frequency switching, power supply, and hard-switched circuits, featuring low gate charge and high avalanche capability.		NCE30H14K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3015S NCEPOWER	1	NCE3015S N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 15A continuous drain current, and low on-resistance of 7.0mΩ at 10V gate-source voltage, suitable for high-frequency switching applications.		NCE3015S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3008N NCEPOWER	1	NCE3008N is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 8A continuous drain current, and low on-resistance of 15mΩ at 10V gate-source voltage, suitable for battery protection and switching applications in a SOT23-6L surface mount package.		NCE3008N	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30D2519K NCEPOWER	1	NCE30D2519K is a complementary N&P-channel MOSFET with 30V VDS, 25A ID for N-channel and -19A ID for P-channel, featuring low RDS(ON) of 12mΩ (N) and 35mΩ (P), TO-252-4L package, suitable for H-bridge and inverter applications.		NCE30D2519K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H15BK NCEPOWER	1	NCE30H15BK N-channel enhancement mode power MOSFET with 30 V drain-source voltage, 150 A continuous drain current, and low on-resistance of 2.5 mΩ typical at 10 V gate-source voltage, suitable for high-frequency switching applications.		NCE30H15BK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P12BS NCEPOWER	1	NCE30P12BS is a channel enhancement mode power MOSFET with -30V drain-source voltage, -12A continuous drain current, and low on-resistance of less than 11mΩ at -4.5V gate voltage, suitable for PWM and load switch applications in a surface mount SOP-8 package.		NCE30P12BS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3035G NCEPOWER	1	NCE3035G is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 7.0mΩ at VGS=10V, suitable for synchronous rectification and high-side switching applications.		NCE3035G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3090K NCEPOWER	1	NCE3090K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 90A continuous drain current, and low on-resistance of 3.4mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in DC/DC converters and synchronous rectifiers.		NCE3090K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3010S NCEPOWER	1	NCE3010S is a channel enhancement mode power MOSFET with 30V drain-source voltage, 10A continuous drain current, and low on-resistance of 12mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications.		NCE3010S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30ND35Q NCEPOWER	1	NCE30ND35Q is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 35A continuous drain current, and low on-resistance of 11mΩ typical at 10V gate-source voltage, housed in a PDFN3.3x3.3-8L package.		NCE30ND35Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3050KA NCEPOWER	1	NCE3050KA N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 11mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications.		NCE3050KA	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE3045G NCEPOWER	1	NCE3045G is a channel enhancement mode power MOSFET with 30V drain-source voltage, 45A continuous drain current, and low on-resistance of 6.9mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency in DC/DC converters and high-frequency switching applications.		NCE3045G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3030K NCEPOWER	1	NCE3030K N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 30A continuous drain current, RDS(ON) less than 14mΩ at VGS=10V, and low gate charge for high-efficiency switching applications.		NCE3030K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3050K NCEPOWER	1	NCE3050K N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 11mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications.		NCE3050K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3040Q NCEPOWER	1	30V, 40A NCE3040Q Power MOSFET with advanced trench technology, offering low on-resistance of 5.7 mΩ at VGS = 10V, high-density cell design, and suitability for DC/DC converters and high-frequency switching applications.		NCE3040Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P55K NCEPOWER	1	NCE30P55K is a -30V, -55A P-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 8.0 mΩ at VGS = -10V and 17 mΩ at VGS = -4.5V, suitable for high current load applications.		NCE30P55K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3050 NCEPOWER	1	NCE3050 is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, and low on-resistance of 11mΩ at VGS=10V, featuring high cell density design for efficient power switching applications.		NCE3050	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30NP1812Q NCEPOWER	1	NCE30NP1812Q is a dual N-channel and P-channel enhancement mode power MOSFET with 30V VDS, 18A ID for N-channel and -12A ID for P-channel, featuring low RDS(ON) and gate charge in a DFN3.3x3.3-8L surface mount package.		NCE30NP1812Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30NP1812G NCEPOWER	1	NCE30NP1812G is a dual N-channel and P-channel enhancement mode power MOSFET in a DFN5x6-8L package, featuring 30 V drain-source voltage, low RDS(on) down to 24 mΩ, and suitable for high-power switching applications.		NCE30NP1812G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3065K NCEPOWER	1	NCE3065K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 65A continuous drain current, and low on-resistance of 4.5mΩ at 10V gate-source voltage, suitable for high-frequency switching applications.		NCE3065K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P25BQ NCEPOWER	1	NCE30P25BQ is a P-channel enhancement mode power MOSFET with -30V drain-source voltage, -25A continuous drain current, and low on-resistance of 9.5mΩ at VGS=-4.5V, suitable for load switch and PWM applications in a DFN3.3x3.3-8L surface mount package.		NCE30P25BQ	3D model not available Symbol and footprint not available 0	0 Build or Request
1 2 3 4

Can't find what you're looking for? Request this part

NCE30 Model Download Search Results

Popular Power Field-Effect Transistors