NCE34 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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NCE3401 Wuxi NCE Power Semiconductor
1 MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23(SOT-23-3) RoHS SOT23 (3-Pin) NCE3401 1 Download Model
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NCE3406AN NCEPOWER
1 NCE3406AN is a 30V, 6A N-channel enhancement mode power MOSFET with low RDS(ON) of less than 55mΩ at VGS=2.5V, suitable for battery protection and switching applications in a surface mount SOT23-6L package. NCE3406AN 0 Build or Request
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NCE3420X NCEPOWER
1 NCE3420X N-Channel Enhancement Mode Power MOSFET with 20V drain-source voltage, 6A continuous drain current, RDS(ON) less than 45mΩ at VGS=2.5V, and low gate charge for load switch applications. NCE3420X 0 Build or Request
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NCE3400A NCEPOWER
1 NCE3400A N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 40mΩ at 10V gate-source voltage, available in SOT-23 surface mount package. NCE3400A 0 Build or Request
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NCE3404Y NCEPOWER
1 NCE3404Y is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 28mΩ at VGS=10V, suitable for load switch and PWM applications in a SOT-23-3L surface mount package. NCE3404Y 0 Build or Request
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NCE3407E NCEPOWER
1 NCE3407E is a -30V, -4.3A channel enhancement mode power MOSFET with 28mΩ RDS(ON) at VGS=-10V, suitable for load switching and PWM applications in a lead-free SOT-23 package. NCE3407E 0 Build or Request
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NCE3400XY NCEPOWER
1 NCE3400XY is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.1A continuous drain current, and low on-resistance of 33mΩ at 2.5V gate drive, suitable for switching and power management applications in SOT23-3L surface mount package. NCE3400XY 0 Build or Request
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NCE3417 NCEPOWER
1 P-Channel Enhancement Mode Power MOSFET NCE3417 with -12V drain-source voltage, -4.4A continuous drain current, RDS(ON) less than 56mΩ at VGS=-2.5V, available in SOT-23 surface mount package. NCE3417 0 Build or Request
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NCE3420 NCEPOWER
1 20V NCE3420 Channel Enhancement Mode Power MOSFET with 6A continuous drain current, RDS(ON) less than 40mΩ at VGS=2.5V, suitable for uni-directional and bi-directional load switch applications in a surface mount SOT-23 package. NCE3420 0 Build or Request
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NCE3407A NCEPOWER
1 NCE3407A is a P-channel enhancement mode power MOSFET in SOT-23 package with -30V drain-source voltage, -4.3A continuous drain current, and low on-resistance of less than 52mΩ at VGS=-10V, suitable for load switch and PWM applications. NCE3407A 0 Build or Request
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NCE3402A NCEPOWER
1 NCE3402A N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 3A continuous drain current, and low on-resistance of less than 85mΩ at 2.5V gate voltage, suitable for battery protection and switching applications in SOT-23 package. NCE3402A 0 Build or Request
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NCE3400AY NCEPOWER
1 NCE3400AY is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 27mΩ at 10V gate-source voltage, suitable for switching applications and load management in surface mount design. NCE3400AY 0 Build or Request
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NCE3401 NCEPOWER
1 NCE3401 is a -30V, -4.2A channel enhancement mode power MOSFET with 48mΩ typical RDS(ON) at VGS=-10V, suitable for load switch and PWM applications in surface mount SOT-23 package. NCE3401 0 Build or Request
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NCE3400X NCEPOWER
1 NCE3400X is a channel enhancement mode power MOSFET with 30V drain-source voltage, 5.1A continuous drain current, and low on-resistance of less than 55mΩ at 2.5V gate voltage, suitable for switching applications and load management in surface mount design. NCE3400X 0 Build or Request
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NCE3401E NCEPOWER
1 NCE3401E is a -30V, -4.4A channel enhancement mode power MOSFET with low RDS(ON) of less than 85mΩ at VGS=-2.5V, suitable for load switch and PWM applications in surface mount package. NCE3401E 0 Build or Request
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NCE3407 NCEPOWER
1 P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.6A continuous drain current, and low on-resistance of less than 95mΩ at VGS=-4.5V, available in SOT-23 surface mount package. NCE3407 0 Build or Request
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NCE3401A NCEPOWER
1 P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 85mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications in SOT-23 package. NCE3401A 0 Build or Request
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NCE3407AY NCEPOWER
1 P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.3A continuous drain current, and low on-resistance of less than 52mΩ at -10V gate-source voltage, suitable for load switch and PWM applications in SOT-23-3L package. NCE3407AY 0 Build or Request
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NCE3404 NCEPOWER
1 NCE3404 is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 31mΩ at 10V gate-source voltage, suitable for load switch and PWM applications. NCE3404 0 Build or Request
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NCE3402 NCEPOWER
1 NCE3402 N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 3A continuous drain current, RDS(ON) less than 75mΩ at VGS=2.5V, and low gate charge, suitable for battery protection and switching applications in SOT-23 package. NCE3402 0 Build or Request
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NCE3400 NCEPOWER
1 NCE3400 N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 35mΩ at 10V gate-source voltage, suitable for switching applications. NCE3400 0 Build or Request
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NCE3401BY NCEPOWER
1 P-Channel Enhancement Mode Power MOSFET NCE3401BY with -30V Drain-Source Voltage, -4.4A continuous drain current, and low on-resistance of 70mΩ at VGS=-2.5V, suitable for load switch and PWM applications in SOT-23-3L surface mount package. NCE3401BY 0 Build or Request
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NCE3406N NCEPOWER
1 NCE3406N is a 30V N-channel enhancement mode MOSFET in SOT23-6L package, with RDS(ON) less than 50mΩ at VGS=2.5V, suitable for battery protection and switching applications. NCE3406N 0 Build or Request
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NCE3401Y NCEPOWER
1 P-Channel Enhancement Mode Power MOSFET NCE3401Y with -30V drain-source voltage, -4.2A continuous drain current, and low RDS(ON) down to 55mΩ at VGS=-10V, suitable for load switch and PWM applications in SOT-23-3L package. NCE3401Y 0 Build or Request
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NCE3401AY NCEPOWER
1 P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 120mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications. NCE3401AY 0 Build or Request
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