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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NCE40P05Y Wuxi NCE Power Semiconductor	1	NCE P-Channel Enhancement Mode Power MOSFET	SOT23 (3-Pin)	NCE40P05Y	3D model available Symbol and footprint available 3	1 Download Model
	NCE40H30D NCEPOWER	1	NCE40H30D N-Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 300A continuous drain current, and 1.8mΩ RDS(ON) at 10V VGS, designed for high-frequency switching and power applications.		NCE40H30D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40H12 NCEPOWER	1	NCE40H12 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 120A continuous drain current, and low on-resistance of 3.1mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications.		NCE40H12	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE4003 NCEPOWER	1	NCE4003 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 3A continuous drain current, 33mΩ on-state resistance at 10V VGS, and low gate charge, suitable for battery protection and switching applications in SOT-23 package.		NCE4003	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE4003A NCEPOWER	1	NCE4003A is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 3A continuous drain current, and low on-state resistance of 32mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications.		NCE4003A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40P20Q1 NCEPOWER	1	NCE40P20Q1 is a channel enhancement mode power MOSFET with -40V drain-source voltage, -20A continuous drain current, and low on-state resistance of 14mΩ typical at VGS=-10V, housed in a DFN3.3x3.3-8L surface mount package.		NCE40P20Q1	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40P20Q NCEPOWER	1	NCE40P20Q is a -40V, -20A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 18mΩ at VGS=-10V, suitable for power management and load switch applications in a DFN3.3x3.3-8L surface mount package.		NCE40P20Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40P13S NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET NCE40P13S with -40V drain-source voltage, -13A continuous drain current, 15mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for power switching and DC-DC converter applications.		NCE40P13S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40P05Y NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET NCE40P05Y with -40V drain-source voltage, -5.3A continuous drain current, 85mΩ RDS(ON) at VGS=-10V, and 125mΩ at VGS=-4.5V, housed in SOT-23-3L package.		NCE40P05Y	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40H12K NCEPOWER	1	40V, 120A NCE40H12K trench MOSFET with advanced technology for low RDS(ON) of 3.95mΩ at VGS=10V, suitable for load switching and high-frequency circuits in TO-252-2L package.		NCE40H12K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE4060K NCEPOWER	1	NCE4060K N-Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 60A continuous drain current, RDS(ON) less than 8.5mΩ at VGS=10V, advanced trench technology for low on-resistance and high switching performance.		NCE4060K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40P25G NCEPOWER	1	NCE40P25G is a -40V, -25A P-channel MOSFET with 11.5mΩ typical RDS(ON) at VGS = -10V, using advanced trench technology for low on-resistance and high-density cell design, suitable for DC/DC converters and high-frequency switching applications.		NCE40P25G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE4080 NCEPOWER	1	NCE4080 N-Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 80A continuous drain current, and 5.3mΩ typical RDS(ON) at 10V gate-source voltage, suitable for high-density switching applications.		NCE4080	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40H11K NCEPOWER	1	40V, 110A NCE40H11K trench MOSFET with advanced technology for low RDS(ON) of 4.0 mΩ at VGS=10V, suitable for load switching and high-frequency circuits in TO-252-2L package.		NCE40H11K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE4015S NCEPOWER	1	NCE4015S is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 15A continuous drain current, and low on-state resistance of 6.1mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency in switching applications.		NCE4015S	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE40NP2815G NCEPOWER	1	NCE40NP2815G is a complementary N-channel and P-channel power MOSFET with 40V drain-source voltage, 28A continuous drain current for N-channel, -15A for P-channel, low on-state resistance, and advanced trench technology for high efficiency.		NCE40NP2815G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40H14 NCEPOWER	1	NCE40H14 is a channel enhancement mode power MOSFET with 40V drain-source voltage, 140A continuous drain current, and low on-resistance of less than 2.9mΩ at VGS=10V, designed for high-frequency switching applications.		NCE40H14	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40H11 NCEPOWER	1	NCE40H11 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 110A continuous drain current, and low on-resistance of 3.4mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency in switching applications.		NCE40H11	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40H21 NCEPOWER	1	NCE40H21 is a channel enhancement mode power MOSFET with 40V drain-source voltage, 210A continuous drain current, and low on-resistance of 2.3mΩ at VGS=10V, suitable for high-frequency switching applications.		NCE40H21	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40H10K NCEPOWER	1	NCE40H10K is a 40V, 100A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 4.3mΩ at VGS=10V and high switching performance in TO-252-2L package.		NCE40H10K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40P07S NCEPOWER	1	NCE40P07S is a P-channel enhancement mode power MOSFET with -40V drain-source voltage, -6.2A continuous drain current, and low on-resistance of 25mΩ at VGS=-10V, suitable for switching applications and DC-DC converters.		NCE40P07S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE4080K NCEPOWER	1	NCE4080K N-Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 80A continuous drain current, RDS(ON) less than 7mΩ at VGS=10V, and low gate charge, suitable for PWM and load switching applications.		NCE4080K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40P15Q NCEPOWER	1	NCE40P15Q is a -40V, -15A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 18mΩ at VGS=-10V, suitable for power management and load switch applications in a DFN3.3x3.3-8L surface mount package.		NCE40P15Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE40P30K NCEPOWER	1	NCE40P30K is a -40V, -30A P-channel MOSFET with advanced trench technology, offering low RDS(ON) of 18mΩ at VGS=-10V and low gate charge, suitable for high current switching applications.		NCE40P30K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE4005 NCEPOWER	1	NCE4005 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 5A continuous drain current, 22mΩ on-state resistance at 10V gate-source voltage, and low gate charge, suitable for battery protection and switching applications.		NCE4005	3D model not available Symbol and footprint not available 0	0 Build or Request
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