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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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NCE4606
NCEPower
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1 | N and P-Channel Enhancement Mode Power MOSFET | Small Outline Packages | NCE4606 |
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NCE4614
Wuxi NCE Power Semiconductor
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1 | MOSFET N & P Channel 40V 8A(Tc),7A(Tc) 2V @ 250uA 19mΩ @ 8A,10V;35mΩ @ 8A,10V SOIC-8_150mil RoHS | Small Outline Packages | NCE4614 |
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NCE4688
NCEPower
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1 | N & P-Channel Enhancement Mode Power MOSFET | Small Outline Packages | NCE4688 |
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NCE4614
NCEPOWER
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1 | NCE4614 N-channel and P-channel enhancement mode power MOSFET with 40 V drain-source voltage, 8 A continuous drain current for N-channel, -7 A for P-channel, low on-state resistance, and high power handling capability in a surface mount SOP-8 package. | NCE4614 |
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NCE4606A
NCEPOWER
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1 | NCE4606A is a dual N and P-channel enhancement mode power MOSFET in SOP-8 package, with 30V drain-source voltage, low RDS(ON), and high power handling capability for surface mount applications. | NCE4606A |
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NCE4606B
NCEPOWER
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1 | NCE4606B is a dual N and P-channel enhancement mode power MOSFET in SOP-8 package, featuring 30V drain-source voltage, 6A continuous drain current, low RDS(ON) down to 25mΩ for N-channel and 39mΩ for P-channel, and optimized gate charge for high-efficiency switching applications. | NCE4606B |
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NCE4688
NCEPOWER
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1 | NCE4688 is an N and P-channel enhancement mode power MOSFET in SOP-8 package, with 60V drain-source voltage, 6.3A continuous drain current for N-channel, 6A for P-channel, low RDS(ON) of 30mΩ and 80mΩ respectively, and low gate charge. | NCE4688 |
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NCE4606
NCEPOWER
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1 | NCE4606 is a complementary N- and P-channel enhancement mode power MOSFET in SOP-8 package, featuring 30 V drain-source voltage, 6.5 A continuous drain current for N-channel, -7 A for P-channel, with low on-resistance and gate charge using trench technology. | NCE4606 |
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NCE4614B
NCEPOWER
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1 | NCE4614B is a complementary N- and P-channel enhancement mode power MOSFET in SOP-8 package, featuring 40 V drain-source voltage, 8 A continuous drain current for N-channel, -7 A for P-channel, low on-resistance, and advanced trench technology for high efficiency. | NCE4614B |
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NCE4606
VBsemi Electronics Co Ltd
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1 | N- and P-channel 30 V MOSFET in SO-8 package with RDS(on) of 0.018 ohm (N-channel) and 0.032 ohm (P-channel), suitable for motor drive and mobile power bank applications. | NCE4606 |
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NCE4614
VBsemi Electronics Co Ltd
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1 | N- and P-Channel 30 V MOSFET in SO-8 package, with RDS(on) of 0.018 ohm (N-channel) and 0.032 ohm (P-channel), rated for motor drive and mobile power bank applications. | NCE4614 |
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