NCE60 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NCE6005AS NCEPower	1	N-Channel Enhancement Mode Power MOSFET	Small Outline Packages	NCE6005AS	3D model available Symbol and footprint available 3	1 Download Model
	NCE6005AR NCEPower	1	VDS=60V,ID=5ARDS(ON) <30mΩ @ VGS=10V (Typ.26mΩ)RDS(ON) <38mΩ @ VGS=4.5V (Typ.32mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current	SOT223 (3-Pin)	NCE6005AR	3D model available Symbol and footprint available 3	1 Download Model
	NCE6020AQ NCEPOWER	1	NCE6020AQ is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 20A continuous drain current, RDS(ON) less than 23mΩ at VGS=10V, and low gate charge, suitable for high-frequency switching applications.		NCE6020AQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6020A NCEPOWER	1	NCE6020A is a Pb-free N-channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of 25mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications.		NCE6020A	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE6003X NCEPOWER	1	NCE6003X is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-state resistance of less than 90mΩ at VGS=10V, suitable for battery protection and switching applications.		NCE6003X	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6008AS NCEPOWER	1	60V, 8A NCE6008AS enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 13.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, suitable for power switching and load switch applications in SOP-8 package.		NCE6008AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6045XG NCEPOWER	1	NCE6045XG is a 60V, 45A N-channel enhancement mode power MOSFET in DFN5x6-8L package, featuring 7.4mΩ typical RDS(ON) at VGS=10V, advanced trench technology, low gate charge, and 150°C operating temperature.		NCE6045XG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P03R NCEPOWER	1	NCE60P03R is a -60V, -3A P-channel MOSFET with low RDS(ON) of 170mΩ at VGS=-10V, advanced trench technology, and high-density cell design for load switch and PWM applications in SOT-223-3L package.		NCE60P03R	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6065G NCEPOWER	1	60V, 65A NCE6065G DFN5X6-8L power MOSFET with advanced trench technology, RDS(ON) less than 6.3 mΩ at VGS = 10V, low gate charge, and high current capability for load switching and PWM applications.		NCE6065G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60NP09S NCEPOWER	1	NCE60NP09S is a complementary MOSFET with 60V drain-source voltage, 9A continuous drain current, low RDS(ON) of 28mΩ (N-channel) and 54mΩ (P-channel), suitable for H-bridge and inverter applications.		NCE60NP09S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6003XY NCEPOWER	1	NCE6003XY is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-resistance of less than 78mΩ at VGS=10V, suitable for battery protection and switching applications.		NCE6003XY	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P50G NCEPOWER	1	NCE60P50G is a -60V, -50A P-channel MOSFET with 23mΩ typical RDS(ON) at VGS=-10V, featuring low gate charge, high current capability, and 150°C operating temperature in a DFN5x6-8L package.		NCE60P50G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P12AS NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET NCE60P12AS with -60V drain-source voltage, -12A continuous drain current, and RDS(ON) less than 14mΩ at VGS=-10V, utilizing advanced trench technology for low on-resistance and high-density cell design.		NCE60P12AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6010J NCEPOWER	1	NCE6010J N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 10A continuous drain current, 35mΩ RDS(ON) at VGS=10V, and 40mΩ at VGS=4.5V, housed in a DFN2X2-6L package.		NCE6010J	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6012AS NCEPOWER	1	NCE6012AS is a 60V, 12A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 6.5 mΩ at VGS = 10V and low gate charge for efficient switching performance in power applications.		NCE6012AS	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE6045XAG NCEPOWER	1	NCE6045XAG is a Channel Enhancement Mode Power MOSFET with 60V VDS, 45A ID, and RDS(ON) less than 9.2mΩ at VGS=10V, using advanced trench technology for low gate charge and high-density cell design.		NCE6045XAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P55K NCEPOWER	1	NCE60P55K is a -60V, -55A P-channel MOSFET with advanced trench technology, offering low RDS(ON) of 23mΩ at VGS=-10V, suitable for high-current load switching applications.		NCE60P55K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6005AR NCEPOWER	1	NCE6005AR is a channel enhancement mode power MOSFET with 60V drain-source voltage, 5A continuous drain current, and low on-resistance of 26mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency in switching applications.		NCE6005AR	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P17AQ NCEPOWER	1	NCE60P17AQ is a -60V, -17A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 48mΩ at VGS=-10V, suitable for power management and load switch applications in a DFN3.3x3.3-8L surface mount package.		NCE60P17AQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6080ED NCEPOWER	1	60V, 80A NCE6080ED trench technology power MOSFET with ultralow RDS(ON) of 6.9 mΩ at VGS = 10V, designed for high-density switching applications requiring efficient heat dissipation and reliable performance in load switching and PWM circuits.		NCE6080ED	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE603583 NCEPOWER	1	NCE603583 is a dual N- and P-channel trench MOSFET with 60 V drain-source voltage, 40 A continuous drain current for the N-channel, 35 A for the P-channel, low on-resistance of 15.5 mΩ (N-channel) and 35 mΩ (P-channel), suitable for H-bridge and inverter applications.		NCE603583	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6004 NCEPOWER	1	NCE6004 is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 4A continuous drain current, and low on-resistance of less than 50mΩ at VGS=10V, suitable for battery protection and switching applications.		NCE6004	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6020AL NCEPOWER	1	NCE6020AL is a channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of 25mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications.		NCE6020AL	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H10F NCEPOWER	1	NCE60H10F is an N-channel enhancement mode power MOSFET with 60V drain-source voltage, 100A continuous drain current, and low on-resistance of 5.7mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.		NCE60H10F	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60T2K2I NCEPOWER	1	NCE60T2K2I and NCE60T2K2K are N-Channel Super Junction Power MOSFETs with 600 V drain-source voltage, 2 A continuous drain current, 1.8 ohm typical RDS(ON), and low gate charge, housed in TO-251 and TO-252 packages respectively.		NCE60T2K2I	3D model not available Symbol and footprint not available 0	0 Build or Request
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