NCE85 Model Download Search Results
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NCE8580 MOSFET
NCEPower
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1 | NCE N-Channel Enhancement Mode Power MOSFET | Transistor Outline, Vertical | NCE8580 MOSFET |
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NCE85H25T
NCEPOWER
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1 | NCE85H25T is an N-channel enhancement mode power MOSFET with 85V drain-source voltage, 250A continuous drain current, and low on-resistance of 2.8mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. | NCE85H25T |
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NCE85H25
NCEPOWER
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1 | NCE85H25 is an N-Channel Enhancement Mode Power MOSFET with 85V drain-source voltage, 250A continuous drain current, and a low on-resistance of 3.0mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. | NCE85H25 |
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NCE85H21
NCEPOWER
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1 | NCE85H21 is an N-channel enhancement mode power MOSFET with 85V drain-source voltage, 210A continuous drain current, and low RDS(ON) of 3.2mΩ at VGS=10V, designed using advanced trench technology for high efficiency and thermal performance. | NCE85H21 |
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NCE85H21C
NCEPOWER
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1 | NCE85H21C is an N-Channel Enhancement Mode Power MOSFET with 85V drain-source voltage, 210A continuous drain current, and low on-resistance of 4.95mΩ at 10V gate-source voltage, suitable for automotive and high-frequency switching applications. | NCE85H21C |
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NCE85H21TC
NCEPOWER
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1 | NCE85H21TC is an N-Channel Enhancement Mode Power MOSFET with 85V VDSS, 210A ID, and RDS(ON) less than 4.9mΩ at VGS=10V, utilizing advanced trench technology for low gate charge and high efficiency in automotive and high-frequency applications. | NCE85H21TC |
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