NCEAP Model Download Search Results
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NCEAP01ND35AG
NCEPOWER
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1 | NCEAP01ND35AG is a SuperTrench Power MOSFET with 100V VDS, 35A ID, 24mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification in automotive and DC/DC converter applications. | NCEAP01ND35AG |
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NCEAP016N60VD
NCEPOWER
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1 | NCEAP016N60VD automotive N-channel Super Trench II Power MOSFET with 60 V drain-source voltage, 315 A continuous drain current, 1.1 mΩ typical RDS(on) at 10 V VGS, and 175 °C maximum operating temperature. | NCEAP016N60VD |
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NCEAP40ND60AG
NCEPOWER
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1 | NCEAP40ND60AG is a Super Trench Power MOSFET with 40V drain-source voltage, 65A continuous drain current, 8.3mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification in automotive and DC/DC converter applications. | NCEAP40ND60AG |
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NCEAP25N10AD
NCEPOWER
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1 | NCEAP25N10AD is an N-channel Super Trench II power MOSFET with 100 V drain-source voltage, 37 A continuous drain current, and low on-resistance of 21 mΩ at 10 V gate-source voltage, optimized for high-frequency switching and synchronous rectification. | NCEAP25N10AD |
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NCEAP025N60AG
NCEPOWER
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1 | NCEAP025N60AG is an Automotive N-Channel Super Trench II Power MOSFET with 60 V drain-source voltage, 185 A continuous drain current, 2.0 mΩ typical RDS(on) at VGS = 10 V, and 175 °C operating junction temperature. | NCEAP025N60AG |
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NCEAP25N10AK
NCEPOWER
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1 | NCEAP25N10AK is an automotive-grade N-channel Super Trench II power MOSFET with 100V drain-source voltage, 37A continuous drain current, and low on-resistance of 21mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification. | NCEAP25N10AK |
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NCEAP40T20AD
NCEPOWER
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1 | NCEAP40T20AD is an automotive N-channel Super Trench power MOSFET with 40V drain-source voltage, 285A continuous drain current, 1.5mΩ typical RDS(ON) at VGS=10V, and 175°C operating temperature, suitable for high-frequency switching and synchronous rectification applications. | NCEAP40T20AD |
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NCEAP30T17GU
NCEPOWER
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1 | NCEAP30T17GU is an N-channel Super Trench power MOSFET with 30 V drain-source voltage, 290 A continuous drain current, and low on-resistance of 0.97 mΩ typical at 10 V gate-source voltage, optimized for high-frequency switching applications. | NCEAP30T17GU |
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NCEAP6055AGU
NCEPOWER
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1 | NCEAP6055AGU is an Automotive N-Channel Super Trench Power MOSFET with 60V VDS, 70A ID, 6.5mΩ typical RDS(ON) at VGS=10V, and 175°C operating temperature, suitable for high-frequency switching and synchronous rectification applications. | NCEAP6055AGU |
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NCEAP4090AGU
NCEPOWER
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1 | NCEAP4090AGU is an N-channel Super Trench power MOSFET with 40V drain-source voltage, 125A continuous drain current, 2.9mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | NCEAP4090AGU |
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NCEAP055N12D
NCEPOWER
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1 | NCEAP055N12D is an automotive-grade N-channel Super Trench II power MOSFET with 120 V drain-source voltage, 128 A continuous drain current, 5.0 mΩ typical RDS(ON) at VGS = 10 V, suitable for high-frequency switching and synchronous rectification applications. | NCEAP055N12D |
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NCEAP40T15AGU
NCEPOWER
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1 | NCEAP40T15AGU is an automotive N-channel Super Trench power MOSFET with 40V drain-source voltage, 240A continuous drain current, 1.35mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | NCEAP40T15AGU |
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NCEAP60T12AK
NCEPOWER
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1 | NCEAP60T12AK is an N-channel Super Trench power MOSFET with 60V VDS, 150A ID, RDS(ON) less than 4.3mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification in automotive applications. | NCEAP60T12AK |
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NCEAP40T17AG
NCEPOWER
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1 | NCEAP40T17AG is an automotive-grade N-channel Super Trench power MOSFET with 40V drain-source voltage, 235A continuous drain current, 1.4mΩ typical RDS(ON) at VGS=10V, and 175°C operating temperature, suitable for high-frequency switching and synchronous rectification applications. | NCEAP40T17AG |
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NCEAP40T11AK
NCEPOWER
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1 | NCEAP40T11AK is an N-channel Super Trench power MOSFET with 40V drain-source voltage, 135A continuous drain current, 3.2mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification in automotive and DC/DC converter applications. | NCEAP40T11AK |
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NCEAP0135AK
NCEPOWER
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1 | NCEAP0135AK is an N-channel Super Trench power MOSFET with 100 V drain-source voltage, 35 A continuous drain current, and low on-resistance of 18 mΩ at 10 V VGS, optimized for high-frequency switching and synchronous rectification. | NCEAP0135AK |
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NCEAP018N60GU
NCEPOWER
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1 | NCEAP018N60GU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 256 A continuous drain current, 1.6 mΩ typical RDS(ON) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. | NCEAP018N60GU |
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NCEAP026N10T
NCEPOWER
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1 | NCEAP026N10T is an Automotive N-Channel Super Trench II Power MOSFET with 100 V VDS, 245 A ID, 2.15 mΩ typical RDS(on) at VGS = 10 V, low gate charge, and 175 °C operating temperature. | NCEAP026N10T |
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NCEAP4040Q
NCEPOWER
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1 | NCEAP4040Q is an Automotive N-Channel Super Trench Power MOSFET with 40V VDS, 42A ID, 7.5mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | NCEAP4040Q |
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NCEAP25N10AG
NCEPOWER
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1 | NCEAP25N10AG is an automotive-grade N-channel Super Trench II power MOSFET with 100 V drain-source voltage, 32 A continuous drain current, and low on-resistance of 21 mΩ at 10 V gate-source voltage, suitable for high-frequency switching and synchronous rectification applications. | NCEAP25N10AG |
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NCEAP16N85AK
NCEPOWER
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1 | NCEAP16N85AK is an N-channel Super Trench power MOSFET with 85V drain-source voltage, 65A continuous drain current, 11.5mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and automotive applications. | NCEAP16N85AK |
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NCEAP40T35ALL
NCEPOWER
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1 | NCEAP40T35ALL is an automotive-grade N-channel Super Trench power MOSFET with 40V drain-source voltage, 570A continuous drain current, 0.63mΩ RDS(ON) at 10V VGS, and 175°C operating temperature, suitable for high-frequency switching and synchronous rectification applications. | NCEAP40T35ALL |
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NCEAP4045GU
NCEPOWER
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1 | NCEAP4045GU is an N-channel Super Trench power MOSFET with 40V drain-source voltage, 50A continuous drain current, 6.0mΩ typical RDS(ON) at VGS=10V, and 8.5mΩ at VGS=4.5V, suitable for high-frequency switching and synchronous rectification in automotive applications. | NCEAP4045GU |
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NCEAP40ND80G
NCEPOWER
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1 | NCEAP40ND80G is an automotive-grade N-channel Super Trench power MOSFET with 40V drain-source voltage, 90A continuous drain current, and low on-resistance of 4.3mΩ typical at 10V VGS, optimized for high-frequency switching and synchronous rectification. | NCEAP40ND80G |
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NCEAP016N85LL
NCEPOWER
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1 | NCEAP016N85LL is an Automotive N-Channel Super Trench II Power MOSFET with 85V VDS, 385A ID, 1.2mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | NCEAP016N85LL |
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