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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Low Vf @ TJ:175 °C; Max Junction Temperature 175 °C; Avalanche Rated 237 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery Transistor Outline, Vertical NDSH30120C-F155 1 Download Model
Part Image Part Image 1 Low Vf @ TJ:175 °C; No Reverse Recovery / No Forward Recovery; Max Junction Temperature 175 °C; Avalanche Rated 130 mJ; High Surge Current Capacity; Positive Temperature Coefficient Transistor Outline, Vertical NDSH30120CDN 1 Download Model
Part Image Part Image 1 Rectifier Diode, Schottky, 1 Phase, 1 Element, 35A, 1200V V(RRM), Silicon Carbide, TO-247 NDSH30120C 0 Build or Request
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