NGTB7 Model Download Search Results
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NGTB75N65FL2WG
onsemi
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1 | Extremely Efficient Trench with Field Stop Technology; TJmax = 175°C; Soft Fast Reverse Recovery Diode; Optimized for High Speed Switching; 5µs Short−Circuit Capability | Transistor Outline, Vertical | NGTB75N65FL2WG |
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NGTB75N60FL2WG
onsemi
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1 | Insulated Gate Bipolar Transistor | NGTB75N60FL2WG |
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NGTB75N60SWG
onsemi
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1 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD | NGTB75N60SWG |
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NGTB75N65FL2WAG
onsemi
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1 | IGBT, 650 V Field Stop II, 75 A | NGTB75N65FL2WAG |
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![Part Image](["https://componentsearchengine.com/2D/0/1064658.png",null,null])
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