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NGTB75N65FL2WAG - onsemi

Description: IGBT, 650 V Field Stop II, 75 A

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NGTB75N65FL2WAG Details

  • Manufacturer Part Number:

    NGTB75N65FL2WAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340AR

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    2016-05-02

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    200 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    536 W

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    262 ns

  • Turn-on Time-Nom (ton):

    78 ns

  • VCEsat-Max:

    2 V

NGTB75N65FL2WAG Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NGTB75N65FL2WAG is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Additionally, ensure the device is operated within the recommended current and power dissipation limits.
  • Proper thermal management is crucial for the NGTB75N65FL2WAG. Ensure good heat sinking, use a thermal interface material (TIM) if necessary, and follow the recommended PCB layout and design guidelines to minimize thermal resistance and ensure efficient heat dissipation.
  • Yes, the NGTB75N65FL2WAG is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, ensure the device is operated within the recommended frequency range and follow proper PCB design and layout guidelines to minimize parasitic inductance and capacitance.
  • To protect the NGTB75N65FL2WAG from ESD, follow proper handling and storage procedures, use ESD-protective packaging and materials, and ensure the device is properly grounded during assembly and testing.

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NGTB75N65FL2WAG Overview

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