NGW30 Model Download Search Results
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NGW30T65M3DFQQ
Nexperia
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1 | Device current is rated at 30 A Low conduction and switching losses Stable and tight parameters for easy parallel operation Maximum junction temperature 175 °C Fully rated and fast reverse recovery diode 5 μs short circuit withstand timeHV-H3TRB qualified | Transistor Outline, Vertical | NGW30T65M3DFQQ |
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NGW30T65M3DFQ/A00Q
Nexperia
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1 | 650 V, 30 A trench field-stop IGBT with full rated silicon diode, -40 175 °C | Other | NGW30T65M3DFQ/A00Q |
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NGW30T65M3DFPQ
Nexperia
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1 | 650 V, 30 A trench field-stop IGBT with full rated silicon diode | Transistor Outline, Vertical | NGW30T65M3DFPQ |
3
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NGW30T65M3DFP/A00Q
Nexperia
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1 | 650 V, 30 A trench field-stop IGBT with full rated silicon diode | Transistor Outline, Vertical | NGW30T65M3DFP/A00Q |
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NGW30T60M3DF
Nexperia
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1 | Insulated Gate Bipolar Transistor | NGW30T60M3DF |
0
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NGW30T65M3DFQ
Nexperia
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1 | Insulated Gate Bipolar Transistor | NGW30T65M3DFQ |
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934668335127
Nexperia
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1 | Insulated Gate Bipolar Transistor | 934668335127 |
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![Part Image](["https://componentsearchengine.com/2D/0T/21109840.2.1.png",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/21803989.2.4.png",null,null])
![Part Image](["https://assets.nexperia.com/documents/outline-3d/sot429-2_3d.png","https://assets.nexperia.com/documents/outline-3d/sot429-2_3d.png",null])
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