NGW75 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Device current is rated at 75 A Low conduction and switching losses Stable and tight parameters for easy parallel operation Maximum junction temperature 175 °C Fully rated and soft fast reverse recovery diode 5 μs short circuit withstand time HV-H3TRB qualified Transistor Outline, Vertical NGW75T65M3DFQQ 1 Download Model
Part Image Part Image 1 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode Transistor Outline, Vertical NGW75T65H3DFQ 1 Download Model
Part Image Part Image 1 650 V, 75 A trench field-stop IGBT with full rated silicon diode Transistor Outline, Vertical NGW75T65M3DFPQ 1 Download Model
Part Image Part Image 1 650 V, 75 A trench field-stop IGBT with full rated silicon diode Transistor Outline, Vertical NGW75T65M3DFP/A00Q 1 Download Model
Part Image Part Image 1 650 V, 75 A trench field-stop IGBT with full rated silicon diode Transistor Outline, Vertical NGW75T65H3DFPQ 1 Download Model
Part Image Part Image 1 650 V, 75 A trench field-stop IGBT with full rated silicon diode Transistor Outline, Vertical NGW75T65M3DFQ/A00Q 1 Download Model
Part Image Part Image 1 650 V, 75 A trench field-stop IGBT with full rated silicon diode Transistor Outline, Vertical NGW75T65H3DFP/A00Q 1 Download Model
Part Image Part Image 1 Insulated Gate Bipolar Transistor NGW75T65M3DFQ 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247 NGW75T65H3DF 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor NGW75T60H3DF 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor 934668963127 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor 934668961127 0 Build or Request
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