NSBA1 Model Download Search Results
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA123YMXWTBG
onsemi
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1 | Built in Bias Resistors; Complimentary NPN Types Available; Wettable Flank Package for Optimal Automated Optical Inspection (AOI); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; XDFNW3 Package Offers Low Seated Height – 0.44 mm Max | Other | NSBA123YMXWTBG |
3
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NSBA114EDP6T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SO Transistor Flat Lead | NSBA114EDP6T5G |
3
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NSBA124EMXWTBG
onsemi
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1 | Built in Bias Resistors; Complimentary NPN Types Available; Wettable Flank Package for Optimal Automated Optical Inspection (AOI); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; XDFNW3 Package Offers Low Seated Height – 0.44 mm Max | Other | NSBA124EMXWTBG |
3
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NSBA143EMXWTBG
onsemi
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1 | Built in Bias Resistors; Complimentary NPN Types Available; Wettable Flank Package for Optimal Automated Optical Inspection (AOI); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; XDFNW3 Package Offers Low Seated Height – 0.44 mm Max | Other | NSBA143EMXWTBG |
3
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NSBA114YDXV6T1G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | Other | NSBA114YDXV6T1G |
3
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NSBA114EF3T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | Other | NSBA114EF3T5G |
3
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NSBA123TDP6T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant | SO Transistor Flat Lead | NSBA123TDP6T5G |
3
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NSBA114TDP6T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant | SO Transistor Flat Lead | NSBA114TDP6T5G |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA143EDP6T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SO Transistor Flat Lead | NSBA143EDP6T5G |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA144EDP6T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SO Transistor Flat Lead | NSBA144EDP6T5G |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA144EMXWTBG
onsemi
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1 | Built in Bias Resistors; Complimentary NPN Types Available; Wettable Flank Package for Optimal Automated Optical Inspection (AOI); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; XDFNW3 Package Offers Low Seated Height – 0.44 mm Max | Other | NSBA144EMXWTBG |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA115TDP6T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant | SO Transistor Flat Lead | NSBA115TDP6T5G |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA113EF3T5G
onsemi
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1 | Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | Other | NSBA113EF3T5G |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA114EMXWTBG
onsemi
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1 | Built in Bias Resistors; Complimentary NPN Types Available; Wettable Flank Package for Optimal Automated Optical Inspection (AOI); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; XDFNW3 Package Offers Low Seated Height – 0.44 mm Max | Other | NSBA114EMXWTBG |
3
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Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA143TDXV6T1
Rochester Electronics LLC
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1 | 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN | NSBA143TDXV6T1 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA124EDP6T5G
Rochester Electronics LLC
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1 | 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, CASE 527AD-01, 6 PIN | NSBA124EDP6T5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA143EDXV6T1
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | NSBA143EDXV6T1 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA123EF3T5G
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | NSBA123EF3T5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA114TDXV6T5G
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | NSBA114TDXV6T5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA123JF3T5G
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | NSBA123JF3T5G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA144EDXV6T1G
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | NSBA144EDXV6T1G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA144WDXV6T1G
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | NSBA144WDXV6T1G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA143ZF3T5G
onsemi
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1 | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 254 mW Surface Mount SOT-1123 | NSBA143ZF3T5G |
1
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Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA124XDXV6T5
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | NSBA124XDXV6T5 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NSBA143TDXV6T1G
onsemi
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1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | NSBA143TDXV6T1G |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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