NTLJF Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NTLJF4156NT1G onsemi	1	WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction; Co-Packaged MOSFET and Schottky For Easy Circuit Layout; RDS(on) Rated at Low VGS=1.5 V; Low Profile (< 0.8mm) for Easy Fit in Thin Environments; Low VF Schottky	Other	NTLJF4156NT1G	3D model not available Symbol and footprint available 2	1 Download Model
	NTLJF3117PT1G onsemi	1	20 V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)	Other	NTLJF3117PT1G	3D model available Symbol and footprint available 3	1 Download Model
	NTLJF4156NTAG Rochester Electronics LLC	1	2.5A, 30V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN6, 6 PIN		NTLJF4156NTAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTLJF3118NT1G onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NTLJF3118NT1G	3D model not available Symbol and footprint not available 0	0 Build or Request

	NTLJF4156NT1G Rochester Electronics LLC	1	2.5A, 30V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN6, 6 PIN		NTLJF4156NT1G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTLJF3118NTBG onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 20V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NTLJF3118NTBG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTLJF3118NTAG Rochester Electronics LLC	1	2.6A, 20V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN, 6 PIN		NTLJF3118NTAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTLJF3117PTAG onsemi	1	Power Field-Effect Transistor, 2.3A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NTLJF3117PTAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTLJF1103PT1G onsemi	1	Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		NTLJF1103PT1G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTLJF3118NTBG Rochester Electronics LLC	1	2.6A, 20V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN, 6 PIN		NTLJF3118NTBG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTLJF4156NTAG onsemi	1	Power Field-Effect Transistor, 2.5A I(D), 30V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NTLJF4156NTAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTLJF3118NTAG onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 20V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NTLJF3118NTAG	3D model not available Symbol and footprint not available 0	0 Build or Request

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