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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NUP2301MW6T1G
onsemi
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1 | Low Capacitance (2.0 pF Max Between I/O Lines; Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22; Protection for IEC61000-4-2 (Level 4); Ensures Data Line Speed and Integrity; Directs the Transient to Either Positive Side or to Ground; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | SOT23 (6-Pin) | NUP2301MW6T1G |
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NUP2301MW6T1
onsemi
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1 | Trans Voltage Suppressor Diode, 70V V(RWM), Unidirectional, 4 Element, Silicon | NUP2301MW6T1 |
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NUP2301MW6T1
Rochester Electronics LLC
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1 | UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, CASE 419B-02, SC-88, 6 PIN | NUP2301MW6T1 |
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SZNUP2301MW6T1G
onsemi
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1 | Low Capacitance (2.0 pF Max Between I/O Lines; Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22; Protection for IEC61000-4-2 (Level 4); Ensures Data Line Speed and Integrity; Directs the Transient to Either Positive Side or to Ground; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | SZNUP2301MW6T1G |
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