OM1N1 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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ESP32-S3-WROOM-1-N16R2 Espressif Systems
1 Bluetooth, WiFi 802.11b/g/n, Bluetooth v5.0 Transceiver Module 2.4GHz PCB Trace Surface Mount , 3V ~ 3.6V , 95mA ~ 97mA , -40°C ~ 85°C (TA) Other ESP32-S3-WROOM-1-N16R2 1 Download Model
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ESP32-C5-WROOM-1-N16R8 Espressif Systems
1 Espressif WiFi module series ESP 20 MHz and 40 MHz , 32-bit RISC-V , 18.0mm × 27.5mm × 3.3mm , -40°C ~ 85°C Other ESP32-C5-WROOM-1-N16R8 1 Download Model
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ESP32-C5-WROOM-1-N16R4 Espressif Systems
1 Espressif Systems WiFi/Bluetooth Module IEEE 802.11b/g/n/ax; 2.4/5 GHz; HT20; up to 150 Mbps 28-SMD Module PCB HEIGHT-3.45 Other ESP32-C5-WROOM-1-N16R4 1 Download Model
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ESP32-S3-WROOM-1-N16 Espressif Systems
1 Bluetooth, WiFi 802.11b/g/n, Bluetooth v5.0 Transceiver Module 2.4GHz PCB Trace Surface Mount Other ESP32-S3-WROOM-1-N16 1 Download Model
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ESP32-S3-WROOM-1-N16R8 Espressif Systems
1 Multiprotocol Modules SMD Module, ESP32-S3R8, 3.3V, 8 MB Octal PSRAM Die, 16 MB Quad SPI Flash, PCB Antenna Other ESP32-S3-WROOM-1-N16R8 1 Download Model
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OM1N100ST International Rectifier
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100ST 0 Build or Request
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OM1N100SA Omnirel Corp
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100SA 0 Build or Request
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OM1N100STV Infineon Technologies AG
0 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100STV 0 Build or Request
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OM1N100SA International Rectifier
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100SA 0 Build or Request
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OM1N100SAV Infineon Technologies AG
0 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100SAV 0 Build or Request
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OM1N100CSA Omnirel Corp
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100CSA 0 Build or Request
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OM1N100CST Omnirel Corp
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100CST 0 Build or Request
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OM1N100SAT International Rectifier
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100SAT 0 Build or Request
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OM1N100ST Infineon Technologies AG
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100ST 0 Build or Request
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OM1N100SAV Omnirel Corp
1 Power Field-Effect Transistor, 1A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100SAV 0 Build or Request
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OM1N100STV Omnirel Corp
1 Power Field-Effect Transistor, 1A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100STV 0 Build or Request
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OM1N100SA Infineon Technologies AG
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100SA 0 Build or Request
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OM1N100ST Omnirel Corp
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100ST 0 Build or Request
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OM1N100CST Infineon Technologies AG
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100CST 0 Build or Request
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OM1N100STT Infineon Technologies AG
0 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100STT 0 Build or Request
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OM1N100CSA Infineon Technologies AG
1 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100CSA 0 Build or Request
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OM1N100SAT Infineon Technologies AG
0 Power Field-Effect Transistor, 0.5A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100SAT 0 Build or Request
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OM1N100STT Omnirel Corp
1 Power Field-Effect Transistor, 1A I(D), 1000V, 8.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA OM1N100STT 0 Build or Request
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OM1N100SAT Omnirel Corp
1 Power Field-Effect Transistor, 1A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA OM1N100SAT 0 Build or Request
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ESP32-C6-WROOM-1-N16 Espressif Systems
1 Module: IoT; Bluetooth Low Energy,WiFi; PCB; SMD; 18x25.5x3.1mm ESP32-C6-WROOM-1-N16 1 Download Model
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