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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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PMF780SN
Nexperia
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1 | FET | Other | PMF780SN |
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PMF780SN
Philips Semiconductors
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1 | Power Field-Effect Transistor, 0.57A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | PMF780SN |
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PMF780SN,115
NXP Semiconductors
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1 | Small Signal Field-Effect Transistor, 0.57A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | PMF780SN,115 |
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PMF78A
SUNMATE electronic Co., LTD
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1 | Surface mount transient voltage suppressor diode with 200W peak pulse power capability, 5.0 to 170V breakdown voltage range, SOD-123FL package, and low profile design for high temperature soldering applications.Surface mount transient voltage suppressor diode in SOD-123FL package with 200W peak pulse power capability, 5.0 to 170V breakdown voltage range, and low profile design for high temperature soldering applications. | PMF78A |
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PMF780SN
NXP Semiconductors
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1 | Small Signal Field-Effect Transistor, 0.57A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | PMF780SN |
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PMF78CA
SUNMATE electronic Co., LTD
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1 | Surface mount transient voltage suppressor diode with 200W peak pulse power capability, 5.0 to 170V breakdown voltage range, SOD-123FL package, and low profile design for high temperature soldering applications.Surface mount transient voltage suppressor diode in SOD-123FL package with 200W peak pulse power capability, 5.0 to 170V breakdown voltage range, and low profile design for high temperature soldering applications.Surface mount transient voltage suppressor diode in SOD-123FL package with 200W peak pulse power capability, 5.0 to 170V breakdown voltage range, low profile design, and bidirectional polarity option. | PMF78CA |
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PMF780SN,115
Nexperia
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1 | Small Signal Field-Effect Transistor, 0.57A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | PMF780SN,115 |
1
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Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||